Cartujo, P. : rechercher sur Z-Library

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1

Analysis of a reverse-biased linearly graded junction with high concentration of deep impurities

J.A. Lopez-Villanueva, J.A. Jimenez-Tejada, P. Cartujo, J.R. Morante, J.E. Carceller

Journal:

Solid-State Electronics

Année:

1990

Langue:

english

Fichier:

PDF, 562 KB

english, 1990

2

A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels

J.A. Jimenez-Tejada, J.A. Lopez-Villanueva, P. Cartujo, J.E. Carceller

Journal:

Solid-State Electronics

Année:

1992

Langue:

english

Fichier:

PDF, 776 KB

english, 1992

3

Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

Roldan, J.B., Gamiz, F., Lopez-Villanueva, J.A., Cartujo, P., Godoy, A.

Journal:

IEEE Transactions on Electron Devices

Année:

2001

Langue:

english

Fichier:

PDF, 103 KB

english, 2001

4

Strained-Si on Si1-xGex MOSFET mobility model

Roldan, J.B., Gamiz, F., Cartujo-Cassinello, P., Cartujo, P., Carceller, J.E., Roldan, A.

Journal:

IEEE Transactions on Electron Devices

Année:

2003

Langue:

english

Fichier:

PDF, 273 KB

english, 2003

5

The dependence of the electron mobility on the longitudinal electric field in MOSFETs

Roldán, J B, Gámiz, F, López-Villanueva, J A, Carceller, J E, Cartujo, P

Journal:

Semiconductor Science and Technology

Année:

1997

Langue:

english

Fichier:

PDF, 192 KB

english, 1997

6

Modified Schrödinger equation including nonparabolicity for the study of a two-dimensional electron gas

Lo´pez-Villanueva, J. A., Melchor, I., Cartujo, P., Carceller, J. E.

Journal:

Physical Review B

Année:

1993

Langue:

english

Fichier:

PDF, 222 KB

english, 1993

7

Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon

J.R. Morante, J.E. Carceller, P. Cartujo, J. Barbolla

Journal:

Solid-State Electronics

Année:

1983

Langue:

english

Fichier:

PDF, 409 KB

english, 1983

8

A high-frequency bidirectional capacitance method to study the evolution of the interface state density generated at low temperatures

J.A. Lopez-Villanueva, J.A. Jimenez-Tejada, P. Cartujo, J. Bausells, J.E. Carceller

Journal:

Solid-State Electronics

Année:

1992

Langue:

english

Fichier:

PDF, 687 KB

english, 1992

9

Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures

A. Hermas, J.R. Morante, J. Samitier, A. Cornet, P. Cartujo, E. Lora-Tamayo

Journal:

Surface Science Letters

Année:

1986

Langue:

english

Fichier:

PDF, 48 KB

english, 1986

10

Double gate silicon on insulator transistors. A Monte Carlo study

F. Gámiz, J.B. Roldán, A. Godoy, J.E. Carceller, P. Cartujo

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 468 KB

english, 2004

11

Electron transport in silicon-on-insulator devices

F Gámiz, J.B Roldán, J.A López-Villanueva, P Cartujo-Cassinello, J.E Carceller, P Cartujo, F Jiménez-Molinos

Journal:

Solid-State Electronics

Année:

2001

Langue:

english

Fichier:

PDF, 446 KB

english, 2001

12

Monte Carlo simulation of electron mobility in silicon-on-insulator structures

F Gámiz, J.B Roldán, J.A López-Villanueva, P Cartujo-Cassinello, F Jiménez-Molinos

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 300 KB

english, 2002

13

Experimental determination of the effective mobility in NMOSFETs: a comparative study

J. Banqueri, J.A. López-Villanueva, P. Cartujo-Cassinello, S. Rodrı́guez, J.E. Carceller

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 287 KB

english, 1999

14

Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon

J. R. Morante, J. E. Carceller, P. Cartujo, J. J. Barbolla

Journal:

physica status solidi (b)

Année:

1982

Langue:

english

Fichier:

PDF, 478 KB

english, 1982

15

Analysis of the edge region photocapacitance at constant bias in Te-doped Al0.55Ga0.45As

J.R. Morante, J. Samitier, A. Herms, A. Cornet, P. Cartujo

Journal:

Solid-State Electronics

Année:

1986

Langue:

english

Fichier:

PDF, 736 KB

english, 1986

16

Image and exchange-correlation effects in double gate silicon-on-insulator transistors

F Gámiz, P Cartujo-Cassinello, F Jiménez-Molinos, J.E Carceller, P Cartujo

Journal:

Microelectronic Engineering

Année:

2004

Langue:

english

Fichier:

PDF, 203 KB

english, 2004

17

A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry

J.B. Roldán, F. Gámiz, J.A. López-Villanueva, J.E. Carceller, P. Cartujo

Journal:

Computer Physics Communications

Année:

1999

Langue:

english

Fichier:

PDF, 33 KB

english, 1999

18

Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

Roldan, J.B., Gamiz, F., Lopez-Villanueva, J.A., Cartujo-Cassinello, P.

Journal:

IEEE Electron Device Letters

Année:

2000

Langue:

english

Fichier:

PDF, 67 KB

english, 2000

19

Importance of the choice of the profile model for ap-njunction in the location of deep levels

J. A. Jimenez-Tejada, J. A. Lopez-Villanueva, P. Cartujo, J. Vicente, J. E. Carceller

Journal:

Journal of Electronic Materials

Année:

1992

Langue:

english

Fichier:

PDF, 364 KB

english, 1992

20

Influence of the interface-state density on the electron mobility in silicon inversion layers

J. Banqueri, F. Gámiz, J. E. Carceller, P. Cartujo, J. A. López-Villanueva

Journal:

Journal of Electronic Materials

Année:

1993

Langue:

english

Fichier:

PDF, 479 KB

english, 1993

21

Universality of electron mobility curves in MOSFETs: a Monte Carlo study

Gamiz, F., Lopez-Villanueva, J.A., Banqueri, J., Carceller, J.E., Cartujo, P.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 858 KB

english, 1995

22

Study of the effects of a stepped doping profile in short-channel MOSFETs

Lopez-Villanueva, J.A., Gamiz, F., Roldan, J.B., Ghailan, Y., Carceller, J.E., Cartujo, P.

Journal:

IEEE Transactions on Electron Devices

Année:

1997

Langue:

english

Fichier:

PDF, 170 KB

english, 1997

23

Effects of the inversion layer centroid on MOSFET behavior

Lopez-Villanueva, J.A., Cartujo-Casinello, P., Banqueri, J., Gamiz, F., Rodriguez, S.

Journal:

IEEE Transactions on Electron Devices

Année:

1997

Langue:

english

Fichier:

PDF, 218 KB

english, 1997

24

Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

Gamiz, F., Lopez-Villanueva, J.A., Roldan, J.B., Carceller, J.E., Cartujo, P.

Journal:

IEEE Transactions on Electron Devices

Année:

1998

Langue:

english

Fichier:

PDF, 99 KB

english, 1998

25

A model for the drain current of deep submicrometer MOSFETs including electron-velocity overshoot

Roldan, J.B., Gamiz, F., Lopez-Villanueva, J.A., Cartujo, P., Carceller, J.E.

Journal:

IEEE Transactions on Electron Devices

Année:

1998

Langue:

english

Fichier:

PDF, 85 KB

english, 1998

26

Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

Lopez-Villanueva, J.A., Cartujo-Cassinello, P., Gamiz, F., Banqueri, J., Palma, A.J.

Journal:

IEEE Transactions on Electron Devices

Année:

2000

Langue:

english

Fichier:

PDF, 131 KB

english, 2000

27

Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

GaÌmiz, F., Cartujo-Cassinello, P., RoldaÌn, J. B., JimeÌnez-Molinos, F.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 421 KB

english, 2002

28

Dependence of the optical cross section of interface states on the photon energy at Si-SiO2 structures

Herms, A., Morante, J.R., Samitier, J., Cornet, A., Cartujo, P., Lora-Tamayo, E.

Journal:

Surface Science

Année:

1986

Langue:

english

Fichier:

PDF, 234 KB

english, 1986

29

[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2-4 Feb. 2005)] Conference on Electron Devices, 2005 Spanish - Monte Carlo simulation of velocity modulation transistors

Sampedro, C., Godoy, A., Gamiz, F., RoIdan, J.B., Carceller, J.E., Cartujo, P.

Année:

2005

Langue:

english

Fichier:

PDF, 517 KB

english, 2005

30

[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2-4 Feb. 2005)] Conference on Electron Devices, 2005 Spanish - Double gate silicon-on-insulator transistors: n/sup +/-n/sup +/ gate versus n/sup +/-p/sup +/ gate configuration

Gamiz, F., Roldan, J.B., Godoy, A., Jimenez-Molinos, F., Cartujo-Cassinello, P.

Année:

2005

Langue:

english

Fichier:

PDF, 661 KB

english, 2005

31

Direct and trap-assisted elastic tunneling through ultrathin gate oxides

Jiménez-Molinos, F., Gámiz, F., Palma, A., Cartujo, P., López-Villanueva, J. A.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 371 KB

english, 2002

32

Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., Carceller, J. E., López-Villanueva, J. A., Rodriguez, S.

Journal:

Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 321 KB

english, 1999

33

An analytical expression for phonon-limited electron mobility in silicon-inversion layers

Gámiz, F., Banqueri, J., Melchor, I., Carceller, J. E., Cartujo, P., López-Villanueva, J. A.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 710 KB

english, 1993

34

[IEEE ESSDERC 2003. 33rd European Solid-State Device Research - ESSDERC '03 - Estoril, Portugal (16-18 Sept. 2003)] Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) - Remote surface roughness scattering in ultrathin-oxide MOSFETs

Gamiz, F., Godoy, A., Jimenez-Molinos, F., Cartujo-Cassinello, P., Roldan, J.B.

Année:

2003

Langue:

english

Fichier:

PDF, 302 KB

english, 2003

35

Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal–oxide–semiconductor transistors

Gámiz, F., Roldán, J. B., Carceller, J. E., Cartujo, P.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 354 KB

english, 2003

36

Analysis of the effects of constant-current Fowler–Nordheim-tunneling injection with charge trapping inside the potential barrier

Lopez-Villanueva, J. A., Jimenez-Tejada, J. A., Cartujo, P., Bausells, J., Carceller, J. E.

Journal:

Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 1.34 MB

english, 1991

37

Coulomb scattering model for ultrathin silicon-on-insulator inversion layers

F. Gamiz, F. Jiménez-molinos, J. B. Roldán, P. Cartujo-cassinello

Année:

2002

Langue:

english

Fichier:

PDF, 306 KB

english, 2002

38

Surface roughness at the Si–SiO[sub 2] interfaces in fully depleted silicon-on-insulator inversion layers

Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Cartujo-Cassinello, P., Carceller, J. E.

Journal:

Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 379 KB

english, 1999

39

Coulomb scattering in strained-silicon inversion layers on Si1−xGex substrates

Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Cartujo, P.

Journal:

Applied Physics Letters

Année:

1996

Langue:

english

Fichier:

PDF, 329 KB

english, 1996

40

Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions

Palma, A., Jimenez-Tejada, J. A., Banqueri, J., Cartujo, P., Carceller, J. E.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 1.23 MB

english, 1993

41

Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

Rodrı́guez, Salvador, Gámiz, F., Palma, A., Cartujo, P., Carceller, J. E.

Journal:

Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 345 KB

english, 2000

42

Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers

Jimenez-Tejada, J. A., Lopez-Villanueva, J. A., Cartujo, P., Vicente, J., Carceller, J. E.

Journal:

Journal of Applied Physics

Année:

1992

Langue:

english

Fichier:

PDF, 1.30 MB

english, 1992

43

Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., López-Villanueva, J. A., Cartujo, P.

Journal:

Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 370 KB

english, 2001

44

Contribution of injection in current noise due to generation and recombination of carriers in p–n junctions

Tejada, J. A. Jiménez, Godoy, A., Palma, A., Cartujo, P.

Journal:

Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 370 KB

english, 2001

45

Majority-carrier capture cross-section determination in the large deep-trap concentration cases

Morante, J. R., Samitier, J., Cornet, A., Herms, A., Cartujo, P.

Journal:

Journal of Applied Physics

Année:

1986

Langue:

english

Fichier:

PDF, 823 KB

english, 1986

46

Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers

Gámiz, F., Cartujo-Cassinello, P., Jiménez-Molinos, F., Carceller, J. E., Cartujo, P.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 247 KB

english, 2003

47

Influence of the doping profile and deep level trap characteristics on generation-recombination noise

Godoy, A., Jiménez-Tejada, J. A., Palma, A., Cartujo, P.

Journal:

Journal of Applied Physics

Année:

1997

Langue:

english

Fichier:

PDF, 365 KB

english, 1997

48

Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

Gámiz, F., Roldán, J. B., Godoy, A., Cartujo-Cassinello, P., Carceller, J. E.

Journal:

Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 803 KB

english, 2003

49

Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

G miz, F, Godoy, A, Rold n, J B, Carceller, J E, Cartujo, P

Journal:

Semiconductor Science and Technology

Année:

2003

Langue:

english

Fichier:

PDF, 274 KB

english, 2003

50

Interpretation of the electron capture by multiphonon emission at native levels in LPE gallium arsenide

J. R. Morante, J. E. Carceller, J. Barbolla, P. Cartujo

Année:

1982

Langue:

english

Fichier:

PDF, 280 KB

english, 1982